Raman spectroscopy of GaP/GaNP core/shell nanowires
نویسندگان
چکیده
منابع مشابه
Origin of strong photoluminescence polarization in GaNP nanowires.
The III-V semiconductor nanowires (NWs) have a great potential for applications in a variety of future electronic and photonic devices with enhanced functionality. In this work, we employ polarization-resolved microphotoluminescence (μ-PL) spectroscopy to study polarization properties of light emissions from individual GaNP and GaP/GaNP core/shell NWs with average diameters ranging between 100 ...
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